EPC EPC9048 User manual

Development Board
EPC9048
Quick Start Guide
Half Bridge with Gate Drive
for EPC2034
Revision 2.0

QUICK START GUIDE Demonstration System EPC9048
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 2
DESCRIPTION
The EPC9048 development boards are in a half bridge topology with
onboard gate drives, featuring the EPC2034 eGaN® eld eect transistors
(FETs). The purpose of these development boards is to simplify the
evaluation process of these eGaN FETs by including all the critical
components on a single board that can be easily connected into any
existing converter.
The development board is 2” x 1.5” and contains two eGaN FETs in a half
bridge conguration using the Texas Instruments UCC27611 gate driver,
supply and bypass capacitors.The board contains all critical components
and layout for optimal switching performance. There are also various
probe points to facilitate simple waveform measurement and eciency
calculation. A complete block diagram of the circuit is given in Figure 1.
For more information on the EPC2034 eGaN FET please refer to the data
sheet available from EPC at www.epc-co.com. The data sheet should be
read in conjunction with this quick start guide.
QUICK START PROCEDURE
The development boards are easy to set up to evaluate the performance
of the eGaN FET. Refer to Figure 2 for proper connect and measurement
setup and follow the procedure below:
1. With power o, connect the input power supply bus to +VIN (J5, J6)
and ground / return to –VIN (J7, J8).
2. With power o, connect the switch node of the half bridge OUT
(J3, J4) to your circuit as required.
3. With power o, connect the gate drive input to +VDD (J1, Pin-1) and
ground return to –VDD (J1, Pin-2).
4. With power o, connect the input PWM control signal to PWM
(J2, Pin-1) and ground return to any of the remaining J2 pins.
5. Turn on the gate drive supply – make sure the supply is between
7 V and 12 V range.
Table 1: Performance Summary (TA= 25°C)
Symbol Parameter Conditions Min Max
Units
VDD
Gate Drive Input
Supply Range
7 12 V
VIN Bus Input Voltage Range 140 V
VOUT
Switch Node
Output Voltage
160 V
IOUT
Switch Node Output
Current
12* A
VPWM
PWM Logic Input
Voltage Threshold
Input ‘High’
Input ‘Low’
3.5
0
6
1.5
V
V
Minimum ‘High’ State
Input Pulse Width
VPWM rise and
fall time < 10ns
100 ns
Minimum ‘Low’ State
Input Pulse Width
VPWM rise and
fall time < 10ns
100# ns
*Assumes inductive load, maximum current depends on die temperature – actual
maximum current will be subject to switching frequency, bus voltage and thermal
management.
# Dependent on time needed to ‘refresh’high side bootstrap supply voltage.
6. Turn on the controller / PWM input source.
7. Turn on the bus voltage to the required value (do not exceed the
absolute maximum voltage of 150 V on VOUT.
8. Once operational, adjust the bus voltage and load PWM control within
the operating range and observe the output switching behavior,
eciency and other parameters.
9. For shutdown, please follow steps in reverse.
NOTE. When measuring the high frequency content switch node (OUT), care must
be taken to avoid long ground leads. Measure the switch node (OUT) by placing the
oscilloscope probe tip through the large via on the switch node (designed for this
purpose) and grounding the probe directly across the GND terminals provided. See
Figure 3 for proper scope probe technique.
VDD
VIN
PWM Input
OUT
Gate Drive Supply
Enable
Half Bridge
with Bypass
Gate Drive
Regulator
Level shift,
Dead-time
Adjust and
Gate Drive
Figure 1: Block Diagram of Development Board

QUICK START GUIDE Demonstration System EPC9048
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 3
Figure 3: Proper Measurement of Switch Node – OUT
Figure 2: Proper Connection and Measurement Setup
8, 160
60
Probe tip
Ground
Figure 4:Typical Waveforms for EPC9048.VIN = 150 V to 7.5 V/10 A (50 kHz) Buck converter showing rising and falling edges,
CH2: (VPWM) Input logic signal – CH4: (IOUT) Output inductor current – CH1: (VOUT) Switch node voltage
8, 160
60
Additional bus capacitance
can be added on back
Gate Drive Supply
(Note Polarity)
+
7 V – 12V
PWM Input
+
VDD Supply
VIN
(For Eciency
External Circuit
Measurement)
_
_V+
_
A
IIN
VIN Supply
Switch Node
<160V

QUICK START GUIDE Demonstration System EPC9048
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 4
THERMAL PERFORMANCE
The EPC9048 development boards showcase the EPC2034 eGaN FETs.
These development boards are intended for bench evaluation with low
ambient temperature and convection cooling. The addition of heat-
sinking and forced air cooling can signicantly increase the current rating
of these devices, but care must be taken to not exceed the absolute
maximum die temperature of 150°C.
NOTE. The EPC9048 development boards do not have any current or
thermal protection on board.
Table 2: Bill of Materials
Item Qty Reference Part Description Manufacturer Manufacturer Part #
1 5 C1, C2, C3, C10, C11 1 uF, 25 V Murata GRM188R61E105KA12D
2 1 C6 100 pF, 50 V TDK C1608C0G1H101J080AA
3 3 C7, R14, R15 0603 Empty
4 4 C8, C9, C12, C13 0.22 μF, 16 V TDK C1005X7R1C224K050BC
5 4 C16, C17, C18, C19 0.1 μF, 250 V TDK C2012X7T2E104K125AE
6 1 C41 10 pF, 50 V Kemet C0402C100J5GACTU
7 1 C42 100 pF, 50 V TDK C1005C0G1H101J050BA
8 10 C60, C61, C62, C63, C64, C65, C66, C67, C68, C69 0.22 μF, 250 V TDK C3216X7T2E224K160AA
9 2 D1, D2 30 V, 30 mA Diodes Inc. SDM03U40-7
10 1 D3 200 V, 1A Diodes Inc. DFLS1200
11 2 D4, D5 40 V, 200 mA Diodes Inc. BAS40LP-7
12 2 D6, D7 5.61 V On Semiconductor MM5Z5 V6ST1G
13 3 FD1, FD2, FD3 Sml Fiducial N/A N/A
14 1 GP1 .1" Male Vert. Würth 61300111121
15 2 J1, SWP1 .1" Male Vert. Würth 61300211121
16 1 J2 .1" Male Vert. Tyco 4-103185-0-04
17 1 J3, J4, J5, J6, J7, J8 .1" Male Vert. FCI 68602-224HLF
18 2 J21, J22 MMCX SMD Molex 0734152063
19 2 P1, P2 DNP 1 k Murata P V37W102C01B00
20 2 Q1, Q2 150 V 7 mΩ EPC EPC2047
21 1 R1 10 k, 1% Stackpole RMCF0603FT10K0
22 2 R2, R3 0 Ω Panasonic ERJ-3GEY0R00 V
23 1 R4 100 Ω, 1% Stackpole RMCF0603FT100R
24 1 R5 470 Ω, 1% Stackpole RMCF0603FT470R
25 1 R6 0 Ω Panasonic ERJ-2GE0R00X
26 2 R11, R12 1 Ω, 1% Stackpole RMCF0402FT1R00
26 2 R21, R22 0 Ω Stackpole RMCF0402ZT0R00
28 2 TP1, TP2 SMD probe loop Keystone 5015
29 1 U1 2 In NAND Fairchild NC7SZ00L6X
30 1 U2 Silicon Labs Si8610BC
31 1 U4 2 In AND Fairchild NC7SZ08L6X
32 1 U5 SO-8 Empty
33 2 U6, U7 TI UCC27611

QUICK START GUIDE Demonstration System EPC9048
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 5
1
2
3
4 5
6
7
8
U2
Si8610BC
1
2
3
4 5
6
7
8
U5
EMPTY
EMPTY
EMPTY
0ΩR3
0.22 μF, 16 V
C12
0.22 μF, 16 V
C13
1
2
3
4
J8
CON4
1
2
3
4
J7
CON4
1
2
3
4
J3
CON4
1
2
3
4
J4
CON4
1
2
3
4
J6
CON4
1
2
3
4
J5
CON4
1
TP 2
Keystone 5015
Keystone 5015
1
TP 1
10 k, 1%
R1
GND
3
A
1
B
2
Y4
VDD6
55
U1
NC7S Z00L6X
0Ω
R2
R14
R15
470 Ω, 1%
R5
C7
30 V, 30 mA
D2
100 Ω, 1%
R4
100 pF , 50 V
C6
30 V, 30m A
D1
GND
3
A
1
B
2
Y4
VDD6
5
U4
NC7S Z08L6X
7 -12 Vdc
1 μF, 25 V
C10
1 μF, 25 V
C11
VCC
VCC
1 μF, 25 V
C2
1 μF, 25 V
C3
6
2
37
4
5
LDO VREF
VSS
1VDD
U6
UCC27611
6
2
37
4
5
LDO VREF
VSS
1VDD
U7
UCC27611
0.22 μF, 16 V
C8
0.22 μF, 16 V
C9
1 μF, 25 V
C1
40 V, 200 mAD4
40 V, 200 mAD5
0.1 μF, 250 V
C18
0.1 μF, 250 V
C16
0.1 μF, 250 V
C17
1 Ω, 1%R12
1 Ω, 1%R11
VDD
VDD
GDL1
GDL2
GDH1
GDH2
GDH
GDL
VIN
GND
DRLT
DRHT
VSW
BC
VCC
DRL
DRH
VCC
PWM1
GND
PWM2 DL
DH
GND
PWM1
DZH
VINVINVIN
FD1
Local Fiducials
FD2FD31
.1" Male Vert.
GP1
Ground Post
EPC2034
Q1
EPC2034
Q2
0.22 μF, 250 V
C60
0.22 μF, 250 V
C61
0.22 μF, 250 V
C62
0.22 μF, 250 V
C63
0.22 μF, 250 V
C64
VINVINVINVINVIN
0.22 μF, 250 V
C65
0.22 μF, 250 V
C66
0.22 μF, 250 V
C67
0.22 μF, 250 V
C68
0.22 μF, 250 V
C69
VINVINVINVINVIN
10 pF, 50 V
C41
100 pF , 50 V
C42
1
2
3
4
.1" Male Vert.
J2
PWM1
GND
GND
PWM2
.1" Male Vert.
1
2
J1
.1" Male Vert.
1
2
SW P1
Switch Node SIP Probe
VSW
MMCXSMD
EMPTY
J21
MMCXSMD
J22
0Ω
1
2R21
0Ω
12 R22
EMPTYEMPTY
EMPTY
EMPTY
MMCX Gate Probes
GDHGDL
VSW
0.1 μF, 250 V
C19
VIN
0Ω
1 2
R6
D6
MM5Z5V6STIG
D7
MM5Z5V6ST1G
200 V, 1 A
D3
DNP 1 k
P1
DNP 1 k
P2
i
Net Class
ClassName: HighVoltageGate
i
Net Class
ClassName: HighVoltage
i Net Class
ClassName: HighVoltage
i
Net Class
ClassName: HighVoltageGate
Half Bridge Board using EPC2034
5
Figure 5: Development Board Schematic

Demonstration Board Warning and Disclaimer
The EPC9048 board is intended for product evaluation purposes only and is not intended for commercial use. Replace components on the Evaluation Board only with those parts shown on the parts
list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions.
This board is intended to be used by certied professionals, in a lab environment, following proper safety procedures. Use at your own risk.
As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board builds are
at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Ecient Power Conversion Corporation (EPC) makes
no guarantee that the purchased board is 100% RoHS compliant.
TheEvaluationboard (or kit)is for demonstration purposesonly and neitherthe Boardnor this Quick Start Guide constitute asales contract or create any kindof warranty, whetherexpress orimplied,
as to the applications or products involved.
Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability arising
out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the rights of others.
EPC Products are distributed through Digi-Key.
www.digikey.com
For More Information:
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