EPC EPC9055 User manual

EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015
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DESCRIPTION
This development board is in a monolithic half bridge topology with onboard gate drives, featuring
the EPC2106 eGaN (Enhancement-mode Gallium Nitride) Integrated Dual FET. The purpose of
these development boards is to simplify the evaluation process of these eGaN FETs by including all
the critical components on a single board that can be easily connected into any existing converter.
The development board is 2” x 1.5” and contains a dual integrated eGaN FET, in a half bridge
conguration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The
board contains all critical components and layout for optimal switching performance. There are
also various probe points to facilitate simple waveform measurement and eciency calculation. A
complete block diagram of the circuit is given in Figure 1.
For more information on the EPC2106 eGaN Integrated Dual FET, please refer to the datasheets
available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this
quick start guide.
Development Board
EPC9055
Quick Start Guide
Half Bridge with Gate Drive
for EPC2106
Demonstration Board Notication
EPC9055 boards are intended for product evaluation purposes only and are not intended for commercial use. As evaluation tools, they are not designed for compliance with the European Union directive on
electromagnetic compatibility or any other such directives or regulations. As board builds are at times subject to product availability, it is possible that boards may contain components or assembly materials
that are not RoHS compliant. Ecient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant. No Licenses are implied or granted under any patent
right or other intellectual property whatsoever. EPC assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or any other intellectual
property rights of any kind.
EPC reserves the right at any time, without notice, to change said circuitry and specications.
Table 1: Performance Summary (TA= 25°C)
SYMBOL PARAMETER CONDITIONS MIN MAX UNITS
V
DD
Gate Drive Input Supply Range 7 12 V
V
IN
Bus Input Voltage Range 80 V
V
OUT
Switch Node Output Voltage 100 V
I
OUT
Switch Node Output Current 3* A
V
PWM
PWM Logic Input Voltage
Threshold
Input ‘High’
Input ‘Low’
3.5
0
6
1.5
V
V
Minimum ‘High’ State Input Pulse
Width
V
PWM
rise and fall time < 10ns 60 ns
Minimum ‘Low’ State Input Pulse
Width
V
PWM
rise and fall time < 10ns 100# ns
*Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject
to switching frequency, bus voltage and thermals cooling.
# Limited by time needed to‘refresh’high side bootstrap supply voltage.

QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 2
EPC9055
QUICK START PROCEDURE
Figure 1: Block Diagram of Development Board
The EPC9055 development board is easy to set up to evaluate the
performance of the eGaN-IC monolithic half bridge.The board allows the
on-board placement of buck output lter components. Refer to Figure 2
for proper connect and measurement setup and follow the procedure
below:
1. With power o, connect the input power supply bus to +VIN (J5, J6)
and ground / return to –VIN (J7, J8).
2. With power o, connect the switch node of the half bridge OUT
(J3, J4) to your circuit as required.
3. With power o, connect the gate drive input to +VDD (J1, Pin-1) and
ground return to –VDD (J1, Pin-2).
4. With power o, connect the input PWM control signal to PWM
(J2, Pin-1) and ground return to any of the remaining J2 pins.
5. Turn on the gate drive supply – make sure the supply is between 7 V
and 12 V range.
6. Turn on the bus voltage to the required value (do not exceed the
absolute maximum voltage on VOUT of 100 V)
7. Turn on the controller / PWM input source and probe switching node
to see switching operation.
8. Once operational, adjust the bus voltage and load PWM control
within the operating range and observe the output switching
behavior, eciency and other parameters.
9. For shutdown, please follow steps in reverse.
NOTE. When measuring the high frequency content switch node (OUT), care must
be taken to avoid long ground leads. Measure the switch node (OUT) by placing the
oscilloscope probe tip through the large via on the switch node (designed for this
purpose) and grounding the probe directly across the GND terminals provided. See
Figure 3 for proper scope probe technique.
VDD VIN
PWM Input
OUT
Gate Drive Supply
Logic and
Dead-time
Adjust
Monolithic
Half Bridge
Gate Drive
Regulator
LM5113
Gate
Driver

QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 3
EPC9055
QUICK START PROCEDURE
Figure 3: Proper Measurement of Switch Node – OUT
Figure 2: Proper Connection and Measurement Setup
Gate Drive Supply
(Note Polarity)
+
7 V – 12 V
PWM Input
+
VDD Supply
VIN
(For Eciency External Circuit
Measurement)
_
_V
+
_
A
IIN
VIN Supply
Switch Node
<80V
55, 80
55, 80
Do not use probe ground lead
Place probe tip on SW pad
Minimize loop
Ground probe
againstTP3

QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 4
EPC9055
THERMAL PERFORMANCE
400 LFM
The EPC9055 development boards showcase the EPC2106 eGaN FETs.
These development boards are intended for bench evaluation with low
ambient temperature and convection cooling. The addition of heat-
sinking and forced air cooling can signicantly increase the current rating
Figure 4:TypicalWaveforms for EPC9055. VIN = 80V to 5V/3 A (500 kHz) Buck converter showing rising and falling edges,
CH1: (VPWM) Input logic signal – CH2: (IOUT) Output inductor current – CH4: (VOUT) Switch node voltage
of these devices, but care must be taken to not exceed the absolute
maximum die temperature of 150°C.
NOTE. The EPC9055 development boards do not have any current or
thermal protection on board.
Table 2: Bill of Materials
Item Qty Reference Part Description Manufacturer / Part #
1 3 C4, C10, C11, Capacitor, 1 µF, 10%, 25 V, X5R Murata, GRM188R61E105KA12D
2 2 C9, C19 Capacitor, 0.1 µF, 10%, 25 V, X5R TDK, C1005X5R1E104K
3 2 C16, C17 Capacitor, 100 pF, 5%, 50 V, NP0 Kemet, C0402C101K5GACTU
4 1 C21 Capacitor, 1 µF, 10%, 100 V, X7R TDK, CGA4J3X7S2A105K125AE
5 2 D1, D2 Schottky diode, 30 V Diodes Inc., SDM03U40-7
6 3 J1, J2, J9 Connector 2pins of Tyco, 4-103185-0
7 1 J3, J4, J5, J6, J7, J8 Connector FCI, 68602-224HLF
8 1 Q1 eGaN-IC monolithic half bridge EPC, EPC2106
9 1 R1 Resistor, 10.0 K, 5%, 1/8 W Stackpole, RMCF0603FT10K0
10 2 R2, R15 Resistor, 0 Ohm, 1/8 W Stackpole, RMCF0603ZT0R00
11 1 R4 Resistor, 22 Ohm, 1%, 1/8 W Stackpole, RMCF0603FT22R0
12 1 R5 Resistor, 47 Ohm, 1%, 1/8 W Stackpole, RMCF0603FT47R0
13 4 R19, R20, R23, R24 Resistor, 1 Ohm, 1/16 W Stackpole, RMCF0402FT1R00
14 2 TP1, TP2 Test point Keystone Elect, 5015
15 1 TP3 Connector 1/40th of Tyco, 4-103185-0
16 1 U1 I.C., logic Fairchild, NC7SZ00L6X
17 1 U2 I.C., gate driver Texas Instruments, LM5113
18 1 U3 I.C., regulator Microchip, MCP1703T-5002E/MC
19 1 U4 I.C., logic Fairchild, NC7SZ08L6X
20 0 R14 Optional resistor
21 0 D3 Optional diode
22 0 P1, P2 Optional potentiometer
Figure 4 (a) – Rising Edge Figure 4 (b) – Falling Edge
3.75 ns fall time
1.7 ns rise time 550 MHz ringing
13V

EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 5
QUICK START GUIDE EPC9055
Figure 5: Development Board Schematic
VCC
7 - 12 Vdc
C4
1μF, 25V
C10
1μF, 25V
1
2
J1
CON2
R1
10k
PWM1
GND
A
B
Y
VDD
U1
NC7SZ00L6X
80V Max
SW OUT
GND
(Optional)
1
TP3
CON1
1
2
3
4
J8
CON4
1
2
3
4
J7
CON4
1
2
3
4
J3
CON4
1
2
3
4
J4
CON4
1
2
3
4
J6
CON4
1
2
3
4
J5
CON4
C11
1μF, 25V
1
TP2
Keystone 5015
1
TP1
Keystone 5015
R2
Zero
R14
R15
Zero
R5
47
D2
SDM03U40
R4
22
D1
SDM03U40
PWM2
VCC
OUT
1
NC
2
NC
3
GND
4
NC
5
NC
6
NC
7
IN
8
GND
9
U3
MCP1703
1
2
J2
CON2
1
2
J9
CON2
2
P1
2
P2
GND
A
B
Y
VDD
U4
NC7SZ08L6X
C9
0.1μF, 25V
R19
R20
R23
1 ohm
R24
C21
1μF, 100v
U2
LM5113TM
C19
0.1μF, 25V
C17
100pF
C16
100pF
Q1
EPC2106
Optional
Optional
Optional
1 ohm
1 ohm
1 ohm
1 2
3
6 5
5
4
1 2
3
6 5 4
100V 1:1 HB