Panasonic MA4ZD03 User manual

Schottky Barrier Diodes (SBD)
1
Publication date: February 2008 SKH00110CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4ZD03
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
■Features
•Two isolated elements are contained in one package, allowing
high-density mounting
•IF =100 mA rectification is possible
•Optimum for high frequency rectification because of its short re-
verse recovery time (trr)
■Absolute Maximum Ratings Ta=25°C
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
=50 Ω
t
p
=2 µs
t
r
=0.35 ns
δ=0.05
I
F
=100 mA
I
R
=100 mA
R
L
=100 Ω
10%
Input Pulse Output Pulse
I
rr
=10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Parameter Symbol Conditions Min Typ Max Unit
Reverse current IRVR=40 V 5 µA
Forward voltage VFIF=100 mA 0.54 0.60 V
Terminal capacitance CtVR=0 V, f = 1 MHz 12 18 pF
Reverse recovery time *trr IF=IR=100 mA 1.2 ns
Irr =10 mA, RL=100 Ω
Parameter Symbol Rating Unit
Forward current Single IF100 mA
Double 75
Peak forward Single IFM 300 mA
current Double 225
Non-repetitive peak Single IFSM 1A
forward surge current
*Double 0.75
Reverse voltage VR45 V
Repetitive peak reverse voltage VRRM 45 V
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.*: trr measurement circuit
1
4
2
3
■Package
•Code
SMini4-F1
•Pin Name
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
■Marking Symbol: M5A
■Internal Connection

MA4ZD03
2SKH00110CED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRCtVR
10−2
10−3
0 0.4 0.8 1.2
10−1
1
10
103
102
Forward voltage V
F
(V)
Forward current I
F
(mA)
Ta=125°C
75°C
25°C
10
−1
10
−2
0204060
1
10
10
2
10
3
Reverse voltage VR(V)
Reverse current IR(µA)
T
a
=125°C
75°C
25°C
0
20
10
0204060
Reverse voltage VR(V)
Terminal capacitance C
t
(pF)
T
a = 25°C

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semiconductors described in this book
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(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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